TR组件
特点：
1.片上集成，功耗低
2.功率高，效率高
3.采用专用ASIC芯片实现波束控制
4.集成耦合校准功能
5.实现对各通道的完全独立控制
6.高集成度，超小体积
1.片上集成，功耗低
2.功率高，效率高
3.采用专用ASIC芯片实现波束控制
4.集成耦合校准功能
5.实现对各通道的完全独立控制
6.高集成度，超小体积
| Performance | Min | Type | Max | Price | Get Quote |
|---|---|---|---|---|---|
| Frequency Range (GHz) | 8 | - | 12 | Get Price | Get Quote |
| Pules Width (us) | 1 | - | 1000 | ||
| Duty cycle | 1% | - | 30% | ||
| Top Drop (dB) | - | - | 0.5 | ||
| Channels | - | Four Channels in One | - | ||
| TX Power (W) | 45 | - | - | ||
| TX Excitation Level (dBm) | 14 | - | 17 | ||
| TX Band Ripple (dB) | - | - | 1 | ||
| Spurious (dBc) | 50 | - | - | ||
| RX NF (dB) | - | - | 2 | ||
| RX Gain (dB) | 25 | - | - | ||
| Phase Shifter Digits | 6 | - | - | ||
| Phase Shift Step (°) | 5.625 | - | - | ||
| Phase Shift Degree (°) | - | - | 180 | ||
| Attenuator Digits | 6 | - | - | ||
| Attenuator Step (dB) | 0.5 | - | - | ||
| Attenuation (dB) | - | - | 31.5 | ||
| Input P-1 (dBm) | -25 | - | - | ||
| RX Band Ripple (dB) | - | - | 1 | ||
| Burn-out power (W) | 30 | - | - | ||
| Isolation (dB) | 60 | - | - | ||
| Weight (g) | - | - | 120 | ||
| Operating Temperature（℃） | -55 | - | +85 | ||
| Storage Temperature（℃） | -60 | - | +90 | ||
| Efficiency | - | 30% | - | ||
| Power Supply (V) | - | ±5V、+28V | - | ||
| Dimensions | - | 70×60×15mm | - | ||
| Connectors | - | RF Connector :SSMA-F | - |